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Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...
A collaboration between A*STAR, Nanyang Technological University and Soitec is claiming to have broken new ground in the ...
Chipmaking systems create the smallest atomic-scale features in 3D Gate-All-Around transistors.
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